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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES A Collector Current is Large. Collector Saturation Voltage is low. : VCE(sat) -250mV at IC=-200mA/IB=-10mA. A G H 2 1 KTA2012E EPITAXIAL PLANAR PNP TRANSISTOR E B D 3 DIM A B C D E G H J Complementary to KTC4072E. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS. SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55 150 UNIT V V V mA A mW 1. EMITTER 2. BASE 3. COLLECTOR C MAXIMUM RATING (Ta=25 ) J ESM Marking Type Name SZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=-15V, IE=0 IC=-10 A IC=-1mA IE=-10 A VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz MIN. -15 -12 -6 270 TYP. -100 260 6.5 MAX. -100 680 -250 UNIT nA V V V mV MHz pF SYMBOL 2002. 2. 20 Revision No : 1 1/3 KTA2012E h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K Ta= 125 I C /IB =20 C 100 50 30 VCE =-2V 25 C C Ta= =-40 Ta 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K I C /IB =50 I C /IB =20 I C /IB =10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -10K -5K -3K I C /IB =20 Ta=25 C -1K -500 -300 Ta=-40 C Ta=25 C C Ta=125 -100 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSITION FREQUENCY f T (MHz) -1K COLLECTOR CURRENT I C (mA) -500 -300 -100 Ta=1 25 C C Ta=40 C Ta=2 5 VCE =-2V fT - IC 1K 500 300 VCE =-2V Ta=25 C -50 -30 -10 -5 -3 -1 0 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) -0.5 -1.0 -1.5 BASE-EMITTER VOLTAGE VBE (V) 2002. 2. 20 Revision No : 1 2/3 |
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